![]() The answer is not straightforward, I would say: “ It depends.” And yes, taht's not a very informative or satisfying response but let me explain. As a designer you will have to determine whether to use BJTs or MOSFETs in your application power stage? Or should the designer use IGBTs? Would they work in the design? Would they be better? So there are several choices, but which is the best? In this article, we highlighted the major differences between IGBT and MOSFET and how they operate.If you always wondered which power transistor you should use for your circuits, in this article we will see all the main differences between the IGBT, the BJT and of course, the MOSFFET. ![]() These two types of transistors are widely used in modern electronic and power electronic circuits. MOSFETs are used in low power DC applications like in power supplies.īoth IGBT and MOSFET are types of transistors. IGBTs are extensively used in high power AC applications such as in inverter circuits. ![]() Thus, the operation of a MOSFET gets disturbed when the transient occurs. MOSFET cannot handle transient voltage and current. IGBT has ability to handle any transient voltage and current. Transient voltage & current handling ability The switching speed of MOSFET is very high. The switching speed of IGBT is relatively low. The turn-off time of a MOSFET is smaller than IGBT. MOSFET produces higher forward voltage drop than IGBT.įor IGBT, the turn-off time is larger than MOSFET. When IGBT is conducting current, it produces comparatively low forward voltage drop. MOSFET can be used for very high frequency (of the order of MHz) applications. IGBT can only be used for relatively low frequencies, up to a few kHz. MOSFET is capable of handling only low to medium voltage and power. IGBT has ability to handle very high voltage and high power. MOSFET is suitable for low to medium current conduction and controlling. IGBT is suitable for medium to high current conduction and controlling. MOSFET does not have any PN junction in its construction. IGBT has PN junctions in its construction. Sometimes, the body terminal is merged with the source, making it a three terminal device. MOSFET has four terminals which are: source (S), gate (G), drain (D) and body (or substrate). IGBT has three terminals, which are: emitter (E), gate (G) and collector (C). MOSFET is a four terminal semiconductor switching device which is also used as switching and amplification. IGBT is a three terminal semiconductor switching device used in the electronic circuits for switching and amplification of signals. MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor IGBT stands for Insulated Gate Bipolar Transistor. The following table compares and contrasts the various features of IGBT and MOSFET − Parameter Sometimes, the body terminal of the MOSFET is connected to the source terminal, which makes it a three-terminal deviceīased upon the construction and principle of operation, the MOSFETs are of following four types − The four terminals of the MOSFET are: source (S), drain (D), gate (G) and body (or substrate). A MOSFET is a four terminal semiconductor switching device which is used for switching and amplifying the signals in the electronic circuits. MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor.
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